STF35N65DM2 - THT N channel transistors

STF35N65DM2
Description

Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ DM2
Polarisation unipolar
Drain-source voltage 650V
Drain current 20A
Pulsed drain current 90A
Power dissipation 40W
Case TO220FP
Gate-source voltage ±25V
On-state resistance 0.11Ω
Mounting THT
Gate charge 56.3nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat