STF18N60M6 - THT N channel transistors

STF18N60M6
Description

Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 8.2A; Idm: 38A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ M6
Polarisation unipolar
Drain-source voltage 600V
Drain current 8.2A
Pulsed drain current 38A
Power dissipation 25W
Case TO220FP
Gate-source voltage ±25V
On-state resistance 0.28Ω
Mounting THT
Gate charge 16.8nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat