STD5NM60-1 - THT N channel transistors

STD5NM60-1
Description

Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™
Polarisation unipolar
Drain-source voltage 650V
Drain current 3.1A
Pulsed drain current 20A
Power dissipation 96W
Case IPAK
Gate-source voltage ±30V
On-state resistance
Mounting THT
Gate charge 18nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat