STD3NK60Z-1 - THT N channel transistors

STD3NK60Z-1
Description

Transistor: N-MOSFET; unipolar; 600V; 1.51A; Idm: 9.6A; 45W; IPAK

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 1.51A
Pulsed drain current 9.6A
Power dissipation 45W
Case IPAK
Gate-source voltage ±30V
On-state resistance 3.6Ω
Mounting THT
Kind of package tube
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat