STD18N60M6 - SMD N channel transistors

STD18N60M6
Description

Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 13A
Pulsed drain current 38A
Power dissipation 110W
Case DPAK
Gate-source voltage ±25V
On-state resistance 0.23Ω
Mounting SMD
Gate charge 16.8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat