STD10N60M2 - SMD N channel transistors

STD10N60M2
Description

Transistor: N-MOSFET; unipolar; 600V; 4.9A; 85W; DPAK; ESD

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology SuperMesh™
Polarisation unipolar
Drain-source voltage 600V
Drain current 4.9A
Power dissipation 85W
Case DPAK
Gate-source voltage ±25V
On-state resistance 0.6Ω
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat