STB8N65M5 - SMD N channel transistors

STB8N65M5
Description

Transistor: N-MOSFET; unipolar; 650V; 4.4A; 70W; D2PAK; ESD

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology SuperMesh™
Polarisation unipolar
Drain-source voltage 650V
Drain current 4.4A
Power dissipation 70W
Case D2PAK
Gate-source voltage ±25V
On-state resistance 0.6Ω
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
Version ESD
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat