STB14NM50N - SMD N channel transistors

STB14NM50N
Description

Транзистор: N-MOSFET; польовий; 550В; 12А; Idm: 48А; 90Вт; D2PAK

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 550V
Drain current 12A
Pulsed drain current 48A
Power dissipation 90W
Case D2PAK
Gate-source voltage ±25V
On-state resistance 0.28Ω
Mounting SMD
Gate charge 27nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat