STB13NM60N - SMD N channel transistors

STB13NM60N
Description

Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; D2PAK

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™
Polarisation unipolar
Drain-source voltage 600V
Drain current 6.93A
Power dissipation 90W
Case D2PAK
Gate-source voltage ±25V
On-state resistance 0.36Ω
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat