STB11N65M5 - SMD N channel transistors

STB11N65M5
Description

Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MDmesh™ M5
Polarisation unipolar
Drain-source voltage 650V
Drain current 5.6A
Pulsed drain current 36A
Power dissipation 85W
Case D2PAK
Gate-source voltage ±25V
On-state resistance 0.48Ω
Mounting SMD
Gate charge 17nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat