SSM6J511NU - SMD P channel transistors

SSM6J511NU
Description

Transistor: P-MOSFET; unipolar; -12V; -14A; 1.25W; uDFN6; ESD

Specifications
Manufacturer TOSHIBA
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -12V
Drain current -14A
Power dissipation 1.25W
Case uDFN6
Gate-source voltage ±10V
On-state resistance 19.2mΩ
Mounting SMD
Gate charge 47nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat