SSM3K339R - SMD N channel transistors

SSM3K339R
Description

Transistor: N-MOSFET; unipolar; 40V; 2A; 1W; SOT23F

Specifications
Manufacturer TOSHIBA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 40V
Drain current 2A
Power dissipation 1W
Case SOT23F
Gate-source voltage ±12V
On-state resistance 390mΩ
Mounting SMD
Gate charge 1.1nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat