SSM3J334R - SMD P channel transistors

SSM3J334R
Description

Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F; ESD

Specifications
Manufacturer TOSHIBA
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -30V
Drain current -4A
Power dissipation 1W
Case SOT23F
Gate-source voltage ±20V
On-state resistance 136mΩ
Mounting SMD
Gate charge 5.9nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat