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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SSM3J331R

SSM3J331R - SMD P channel transistors

SSM3J331R
Description

Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -10A; 2W; SOT23F; ESD

Specifications
Manufacturer TOSHIBA
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -4A
Pulsed drain current -10A
Power dissipation 2W
Case SOT23F
Gate-source voltage ±8V
On-state resistance 0.15Ω
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat