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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SQM120P06-07L-GE3

SQM120P06-07L-GE3 - SMD P channel transistors

SQM120P06-07L-GE3
Description

Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 125W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -120A
Pulsed drain current -480A
Power dissipation 125W
Case D2PAK
TO263
Gate-source voltage ±20V
On-state resistance 13mΩ
Mounting SMD
Gate charge 0.27µC
Kind of package reel
tape
Kind of channel enhancement
Application automotive industry
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Development and design: Seventh Cat