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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SQM120N10-3M8-GE3

SQM120N10-3M8-GE3 - SMD N channel transistors

SQM120N10-3M8-GE3
Description

Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; D2PAK,TO263

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 120A
Power dissipation 375W
Case D2PAK
TO263
Gate-source voltage ±20V
On-state resistance 3.8mΩ
Mounting SMD
Gate charge 125nC
Kind of channel enhancement
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Development and design: Seventh Cat