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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SQM100P10-19L-GE3

SQM100P10-19L-GE3 - SMD P channel transistors

SQM100P10-19L-GE3
Description

Transistor: P-MOSFET; unipolar; -100V; -53A; 125W; D2PAK,TO263

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -100V
Drain current -53A
Power dissipation 125W
Case D2PAK
TO263
Gate-source voltage ±20V
On-state resistance 19mΩ
Mounting SMD
Gate charge 0.22µC
Kind of channel enhancement
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Development and design: Seventh Cat