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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SQJ431EP-T1-GE3

SQJ431EP-T1-GE3 - SMD P channel transistors

SQJ431EP-T1-GE3
Description

Transistor: P-MOSFET; unipolar; -200V; -12A; Idm: -40A; 27W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -200V
Drain current -12A
Pulsed drain current -40A
Power dissipation 27W
Case PowerPAK® SO8
Gate-source voltage ±20V
On-state resistance 527mΩ
Mounting SMD
Gate charge 106nC
Kind of package reel
tape
Kind of channel enhancement
Application automotive industry
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Development and design: Seventh Cat