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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SQD19P06-60L-GE3

SQD19P06-60L-GE3 - SMD P channel transistors

SQD19P06-60L-GE3
Description

Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -11A
Power dissipation 15W
Case DPAK
TO252
Gate-source voltage ±20V
On-state resistance 55mΩ
Mounting SMD
Gate charge 27nC
Kind of channel enhancement
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Development and design: Seventh Cat