SQ4940AEY-T1-GE3 - Multi channel transistors

SQ4940AEY-T1-GE3
Description

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET x2
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 40V
Drain current 5.3A
Pulsed drain current 32A
Power dissipation 1.3W
Case SO8
Gate-source voltage ±20V
On-state resistance 29mΩ
Mounting SMD
Gate charge 43nC
Kind of package reel
tape
Kind of channel enhancement
Application automotive industry
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Development and design: Seventh Cat