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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SQ4153EY-T1-GE3

SQ4153EY-T1-GE3 - SMD P channel transistors

SQ4153EY-T1-GE3
Description

Transistor: P-MOSFET; unipolar; -12V; -14A; 2.3W; SO8

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -12V
Drain current -14A
Power dissipation 2.3W
Case SO8
Gate-source voltage ±8V
On-state resistance 8.32mΩ
Mounting SMD
Gate charge 151nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat