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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SQ2389ES-T1-GE3

SQ2389ES-T1-GE3 - SMD P channel transistors

SQ2389ES-T1-GE3
Description

Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W; SOT23

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -40V
Drain current -4.1A
Pulsed drain current -16A
Power dissipation 1W
Case SOT23
Gate-source voltage ±20V
On-state resistance 169mΩ
Mounting SMD
Gate charge 12nC
Kind of package reel
tape
Kind of channel enhancement
Application automotive industry
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Development and design: Seventh Cat