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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SQ2364EES-T1-GE3

SQ2364EES-T1-GE3 - SMD N channel transistors

SQ2364EES-T1-GE3
Description

Transistor: N-MOSFET; unipolar; 60V; 1.3A; 1W; SOT23; ESD

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 1.3A
Power dissipation 1W
Case SOT23
Gate-source voltage ±8V
On-state resistance 245mΩ
Mounting SMD
Gate charge 2nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat