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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SQ2318CES-T1-GE3

SQ2318CES-T1-GE3 - SMD N channel transistors

SQ2318CES-T1-GE3
Description

Transistor: N-MOSFET; unipolar; 40V; 4A; Idm: 28A; 1W; SOT23

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 40V
Drain current 4A
Pulsed drain current 28A
Power dissipation 1W
Case SOT23
Gate-source voltage ±20V
On-state resistance 63mΩ
Mounting SMD
Gate charge 13nC
Kind of package reel
tape
Kind of channel enhancement
Application automotive industry
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Development and design: Seventh Cat