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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SQ2308CES-T1-GE3

SQ2308CES-T1-GE3 - SMD N channel transistors

SQ2308CES-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 2A; Idm: 9A; 2W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 60V
Drain current 2A
Pulsed drain current 9A
Power dissipation 2W
Case SOT23
Gate-source voltage ±20V
On-state resistance 0.325Ω
Mounting SMD
Gate charge 3.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat