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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SQ2303ES-T1-GE3

SQ2303ES-T1-GE3 - SMD P channel transistors

SQ2303ES-T1-GE3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.5A; Idm: -10A

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -30V
Drain current -2.5A
Pulsed drain current -10A
Power dissipation 1.9W
Case SOT23
Gate-source voltage ±20V
On-state resistance 370mΩ
Mounting SMD
Gate charge 6.8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat