SQ1539EH-T1-GE3 - Multi channel transistors

SQ1539EH-T1-GE3
Description

Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 1.5W

Specifications
Manufacturer VISHAY
Type of transistor N/P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 30/-30V
Drain current 0.85/-0.85A
Power dissipation 1.5W
Case SC70-6
SOT363
Gate-source voltage ±20V
On-state resistance 1.8Ω/380mΩ
Mounting SMD
Gate charge 1.6/1.4nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat