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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SQ1470AEH-T1-GE3

SQ1470AEH-T1-GE3 - SMD N channel transistors

SQ1470AEH-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 1.7A; Idm: 6.7A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 30V
Drain current 1.7A
Pulsed drain current 6.7A
Power dissipation 3.3W
Case SC70-6
SOT363
Gate-source voltage ±12V
On-state resistance 0.115Ω
Mounting SMD
Gate charge 5.2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat