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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SQ1421EDH-T1-GE3

SQ1421EDH-T1-GE3 - SMD P channel transistors

SQ1421EDH-T1-GE3
Description

Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6,SOT363; ESD

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -1A
Power dissipation 0.5W
Case SC70-6
SOT363
Gate-source voltage ±20V
On-state resistance 0.29Ω
Mounting SMD
Gate charge 3.6nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat