SPP18P06PHXKSA1 - THT P channel transistors

SPP18P06PHXKSA1
Description

Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor P-MOSFET
Technology SIPMOS™
Polarisation unipolar
Drain-source voltage -60V
Drain current -18.7A
Power dissipation 81.1W
Case PG-TO220-3
Gate-source voltage ±20V
On-state resistance 0.13Ω
Mounting THT
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat