SPP11N60C3XKSA1 - THT N channel transistors

SPP11N60C3XKSA1
Description

Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™
Polarisation unipolar
Drain-source voltage 650V
Drain current 7A
Pulsed drain current 33A
Power dissipation 125W
Case PG-TO220
Gate-source voltage ±20V
On-state resistance 0.38Ω
Mounting THT
Kind of channel enhancement
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Development and design: Seventh Cat