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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SPD30P06PGBTMA1

SPD30P06PGBTMA1 - SMD P channel transistors

SPD30P06PGBTMA1
Description

Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor P-MOSFET
Technology SIPMOS™
Polarisation unipolar
Drain-source voltage -60V
Drain current -30A
Power dissipation 125W
Case PG-TO252-3
Gate-source voltage ±20V
On-state resistance 75mΩ
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat