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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SPB80P06PGATMA1

SPB80P06PGATMA1 - SMD P channel transistors

SPB80P06PGATMA1
Description

Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO263-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor P-MOSFET
Technology SIPMOS™
Polarisation unipolar
Drain-source voltage -60V
Drain current -80A
Power dissipation 340W
Case PG-TO263-3
Gate-source voltage ±20V
On-state resistance 23mΩ
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat