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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SIUD401ED-T1-GE3

SIUD401ED-T1-GE3 - SMD P channel transistors

SIUD401ED-T1-GE3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -0.5A; Idm: -1A

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -30V
Drain current -0.5A
Pulsed drain current -1A
Power dissipation 1.25W
Case PowerPAK® 0806-3
Gate-source voltage ±12V
On-state resistance 3.5Ω
Mounting SMD
Gate charge 2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat