Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SISS80DN-T1-GE3

SISS80DN-T1-GE3 - SMD N channel transistors

SISS80DN-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 20V
Drain current 169A
Pulsed drain current 300A
Power dissipation 42W
Case PowerPAK® 1212-8
Gate-source voltage -8...12V
On-state resistance 3mΩ
Mounting SMD
Gate charge 122nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat