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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SIS892ADN-T1-GE3

SIS892ADN-T1-GE3 - SMD N channel transistors

SIS892ADN-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 28A; 52W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 28A
Power dissipation 52W
Case PowerPAK® 1212-8
Gate-source voltage ±20V
On-state resistance 47mΩ
Mounting SMD
Gate charge 6.1nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat