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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SIS413DN-T1-GE3

SIS413DN-T1-GE3 - SMD P channel transistors

SIS413DN-T1-GE3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -30V
Drain current -18A
Pulsed drain current -70A
Power dissipation 33W
Case PowerPAK® 1212-8
Gate-source voltage ±20V
On-state resistance 13.2mΩ
Mounting SMD
Gate charge 110nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat