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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SIS412DN-T1-GE3

SIS412DN-T1-GE3 - SMD N channel transistors

SIS412DN-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A; 10W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 30V
Drain current 12A
Pulsed drain current 30A
Power dissipation 10W
Case PowerPAK® 1212-8
Gate-source voltage ±20V
On-state resistance 24mΩ
Mounting SMD
Gate charge 12nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat