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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SIRC16DP-T1-GE3

SIRC16DP-T1-GE3 - SMD N channel transistors

SIRC16DP-T1-GE3
Description

Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 25V; 60A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET + Schottky
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 25V
Drain current 60A
Pulsed drain current 250A
Power dissipation 34.7W
Case PowerPAK® SO8
Gate-source voltage -16...20V
On-state resistance 1.4mΩ
Mounting SMD
Gate charge 105nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat