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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SIRA99DP-T1-GE3

SIRA99DP-T1-GE3 - SMD P channel transistors

SIRA99DP-T1-GE3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -156A; Idm: -400A

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -30V
Drain current -156A
Pulsed drain current -400A
Power dissipation 66.6W
Case PowerPAK® SO8
Gate-source voltage -20...16V
On-state resistance 2.65mΩ
Mounting SMD
Gate charge 260nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat