SIRA52ADP-T1-RE3 - SMD N channel transistors

SIRA52ADP-T1-RE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 40V
Drain current 105A
Pulsed drain current 200A
Power dissipation 30.7W
Case PowerPAK® SO8
Gate-source voltage -16...20V
On-state resistance 2.3mΩ
Mounting SMD
Gate charge 0.1µC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat