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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SIRA14DP-T1-GE3

SIRA14DP-T1-GE3 - SMD N channel transistors

SIRA14DP-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 46A; Idm: 130A; 20W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 30V
Drain current 46A
Pulsed drain current 130A
Power dissipation 20W
Case PowerPAK® SO8
Gate-source voltage -16...20V
On-state resistance 8.5mΩ
Mounting SMD
Gate charge 29nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat