SIRA06DP-T1-GE3 - SMD N channel transistors

SIRA06DP-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 40W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 30V
Drain current 40A
Pulsed drain current 80A
Power dissipation 40W
Case PowerPAK® SO8
Gate-source voltage -16...20V
On-state resistance 3.5mΩ
Mounting SMD
Gate charge 77nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat