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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SIR626LDP-T1-RE3

SIR626LDP-T1-RE3 - SMD N channel transistors

SIR626LDP-T1-RE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 60V
Drain current 186A
Pulsed drain current 400A
Power dissipation 104W
Case PowerPAK® SO8
Gate-source voltage ±20V
On-state resistance 2.1mΩ
Mounting SMD
Gate charge 135nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat