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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SIR422DP-T1-GE3

SIR422DP-T1-GE3 - SMD N channel transistors

SIR422DP-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 70A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 40V
Drain current 40A
Pulsed drain current 70A
Power dissipation 22.2W
Case PowerPAK® SO8
Gate-source voltage ±20V
On-state resistance 6.6mΩ
Mounting SMD
Gate charge 48nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat