Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SIR186LDP-T1-RE3

SIR186LDP-T1-RE3 - SMD N channel transistors

SIR186LDP-T1-RE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 80.3A; Idm: 150A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 60V
Drain current 80.3A
Pulsed drain current 150A
Power dissipation 57W
Case PowerPAK® SO8
Gate-source voltage ±20V
On-state resistance 6.3mΩ
Mounting SMD
Gate charge 48nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat