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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / SIHP24N80AE-GE3

SIHP24N80AE-GE3 - THT N channel transistors

SIHP24N80AE-GE3
Description

Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 800V
Drain current 13A
Pulsed drain current 51A
Power dissipation 208W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 184mΩ
Mounting THT
Gate charge 89nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat