SIHP15N50E-GE3 - THT N channel transistors

SIHP15N50E-GE3
Description

Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 9.2A
Pulsed drain current 28A
Power dissipation 156W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 0.28Ω
Mounting THT
Gate charge 66nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat