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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / SIHP12N50E-GE3

SIHP12N50E-GE3 - THT N channel transistors

SIHP12N50E-GE3
Description

Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 121A; 114W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 6.6A
Pulsed drain current 121A
Power dissipation 114W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 0.38Ω
Mounting THT
Gate charge 50nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat