SIHG73N60E-GE3 - THT N channel transistors

SIHG73N60E-GE3
Description

Transistor: N-MOSFET; unipolar; 600V; 46A; 520W; TO247AC

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 46A
Power dissipation 520W
Case TO247AC
Gate-source voltage ±30V
On-state resistance 39mΩ
Mounting THT
Gate charge 362nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat